High Responsivity MgxZn1−xO Film UV Photodetector Grown by RF Sputtering
High Responsivity MgxZn1−xO Film UV Photodetector Grown by RF Sputtering
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DOI：
10.1109/lpt.2015.2405011
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发表时间：
2015-05
影响因子：
2.6
通讯作者：
Jyun-Yi Li;Sheng-Po Chang;H. Lin;S. Chang
中科院分区：
文献类型：
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作者：
Jyun-Yi Li;Sheng-Po Chang;H. Lin;S. Chang
本文主要研究了利用射频磁控溅射技术在石英衬底上生长的MgxZn1-xO薄膜。然后将这些薄膜用于制作具有不同流量的氩气（30、25和20 sccm）和氧气（0、5和10 sccm）的金属-半导体-金属紫外（UV）光电探测器（pd）。得到了气体流量为25:5 sccm的MgxZn1-xO UV PD的最佳参数。样品中Mg含量较高，暗电流较低。此外，适当控制5 sccm的氧气流速，使薄膜具有更好的导电性，在280 nm照明和10 V偏压下，薄膜的最大响应率为2.133 a /W。最大光电流为1.3 μA，器件的开/关电流开关特性非常稳定。
This letter focused on MgxZn1-xO thin films grown on quartz substrates using radio frequency magnetron sputtering. The films were then used to fabricate metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) with different flow rates of argon gas (30, 25, and 20 sccm) and oxygen gas (0, 5, and 10 sccm). We obtained the best parameters for the 25:5 sccm gas flow MgxZn1-xO UV PD. The samples' Mg content was relatively high, contributing to low dark current. Furthermore, the oxygen flow rate for 5 sccm was manipulated properly, so the film was more conductive, having a maximum responsivity of 2.133 A/W with 280-nm illumination and 10 V applied bias. The maximum photocurrent was 1.3 μA, and the device's ON/OFF current switching characteristic was very stable.