Evaluation of 1.2 kV SiC MOSFETs in Modular Multilevel Cascaded H-Bridge Three-Phase Inverter for Medium Voltage Grid Applications
Evaluation of 1.2 kV SiC MOSFETs in Modular Multilevel Cascaded H-Bridge Three-Phase Inverter for Medium Voltage Grid Applications
复制标题
DOI：
10.1109/wipdaasia.2018.8734536
复制
发表时间：
2018-05
期刊：
影响因子：
--
通讯作者：
Janviere Umuhoza;Haider Mhiesan;K. Mordi;C. Farnell;H. Alan Mantooth
中科院分区：
文献类型：
--
作者：
Janviere Umuhoza;Haider Mhiesan;K. Mordi;C. Farnell;H. Alan Mantooth
本文研究了用于中压交流电网的模块化多电平级联h桥（CHB）三相逆变器中1.2 kV SiC mosfet的性能。该拓扑的主要目的是消除通常用于将电压源逆变器的输出信号升压到中压电平的大块60 Hz变压器的需要。使用SiC器件(1)。2 kV ~ 6.5 kV SiC mosfet)具有高击穿电压，使系统能够满足并承受中压应力，并且级联模块的数量最少。基于sic的电力电子器件，当在所提出的拓扑结构中使用时，它们显着降低了通常使用Si器件来满足中压水平和功率可扩展性时所面临的复杂性。在低压样机上的仿真和初步实验结果验证了本文提出的九电平CHB拓扑结构。
This paper describes a study evaluating 1.2 kV SiC MOSFETs in modular multilevel cascaded H-bridge (CHB) three-phase inverter for medium voltage ac grid applications. The main purpose of this topology is to remove the need of a bulk 60 Hz transformer that is normally used to step up the output signal of a voltage source inverter to the medium voltage level. Using SiC devices (1. 2 kV ~ 6.5 kV SiC MOSFETs), with their high breakdown voltage, enables the system to meet and withstand the medium voltage stress, with a minimized number of cascaded modules. The SiC-based power electronics, when used in the presented topology, they significantly reduce the complexity usually faced when Si devices are used to meet the medium voltage level and the power scalability. The simulation and preliminary experimental results, on a low-voltage prototype, verifies the nine-level CHB topology that is presented in this paper.