Sintering behaviour, solid solution formation and characterisation of TaC, HfC and TaC-HfC fabricated by spark plasma sintering
Sintering behaviour, solid solution formation and characterisation of TaC, HfC and TaC-HfC fabricated by spark plasma sintering
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DOI：
10.1016/j.jeurceramsoc.2016.02.009
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发表时间：
2016-06-01
影响因子：
5.7
通讯作者：
Lee, William E.
中科院分区：
文献类型：
--
作者：
Cedillos-Barraza, Omar;Grasso, Salvatore;Lee, William E.
研究了由商业 TaC 和 HfC 粉末制成的 TaC-HfC 陶瓷的固溶体形成和烧结行为，这些粉末是使用放电等离子烧结 (SPS) 在高达 2450 摄氏度的温度下制备的。使用 X 射线衍射 (XRD) 进行的相分析和晶格参数测量表明，随着烧结温度的升高，Hf 和 Ta 会相互扩散。高分辨率透射电子显微镜（HRTEM）证实固溶体形成和致密化是通过固态机制实现的。在至少 2350 摄氏度的温度下烧结后，4TaC-1HfC、1TaC-1HfC 和 1TaC-4HfC 粉末实现了固溶体。使用维氏压痕测量的所有陶瓷的断裂韧性 (Kit) 值均在 2.7-3.4 MPa m(1/2) 范围内。 TaC在1400℃时的导热率为55.8W/m·K。热膨胀系数(CTE)为7.08-7.66×10(-6)/K(在25-2000℃范围内)，其中TaC处于较低端。 (C) 2016 Elsevier Ltd. 保留所有权利。
Solid solution formation and sintering behaviour of TaC-HfC ceramics made from commercial TaC and HfC powders prepared using spark plasma sintering (SPS) at temperatures up to 2450 degrees C was investigated. Phase analysis and lattice parameter measurements using X-ray Diffraction (XRD) showed mutual diffusion of Hf and Ta with increasing sintering temperature. High Resolution Transmission Electron Microscopy (HRTEM) confirmed that solid solution formation and densification were achieved by a solid-state mechanism. Solid solutions were achieved for 4TaC-1HfC, 1TaC-1HfC and 1TaC-4HfC powders after sintering at temperatures of at least 2350 degrees C. Fracture toughness (Kit) values were in the range of 2.7-3.4 MPa m(1/2) for all ceramics measured using Vickers indentation. Thermal conductivity of TaC was 55.8 W/m K at 1400 degrees C. Coefficients of thermal expansion (CTE) varied from 7.08-7.66 x 10(-6)/K (in the range of 25-2000 degrees C), with TaC at the lower end. (C) 2016 Elsevier Ltd. All rights reserved.