Wafer-level fabrication of alkali vapor cells using in-situ atomic deposition
Wafer-level fabrication of alkali vapor cells using in-situ atomic deposition
复制标题
DOI：
10.1088/2515-7647/abcbe5
复制
发表时间：
2021-01-01
影响因子：
3.8
通讯作者：
Kitching, J. E.
中科院分区：
文献类型：
--
作者：
Bopp, D. G.;Maurice, V. M.;Kitching, J. E.
我们展示了一种新的技术，用于填充毫米级微加工硅和玻璃腔与碱蒸汽在晶圆级。单个蚀刻的硅晶片包含空腔阵列，所述空腔阵列包含从单元阵列横向偏移的碱性前体材料。晶片被加热以在上部玻璃晶片上产生碱液滴阵列，然后在真空下横向平移并结合以产生电池。该技术可以在市售的键合工具中实施，允许制造具有任意缓冲气体含量和压力的电池，并且可以潜在地生产尺寸低于100 μ m的电池。
We demonstrate a new technique for filling mm-scale microfabricated silicon and glass cavities with alkali vapors at the wafer-scale. A single etched silicon wafer contains an array of cavities containing alkali precursor materials offset laterally from the cell array. The wafer is heated to create an array of alkali droplets on an upper glass wafer, which is then translated laterally under vacuum and bonded to create the cells. This technique can be implemented in a commercially available bonding tool, allows the fabrication of cells with arbitrary buffer gas contents and pressures and can potentially produce cells with dimensions below 100 mu m.