Effective creation of oxygen vacancies as an electron carrier source in tin-doped indium oxide films by plasma sputtering
Effective creation of oxygen vacancies as an electron carrier source in tin-doped indium oxide films by plasma sputtering
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DOI：
10.1063/1.2372571
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发表时间：
2006-12-01
影响因子：
3.2
通讯作者：
Shoji, F.
中科院分区：
文献类型：
--
作者：
Luo, S. N.;Kono, A.;Shoji, F.
我们已经研究了氢的电阻率，霍尔迁移率，和载流子密度的ITO膜在玻璃基板上使用低压等离子体溅射方法的效果。有人发现，在Ar等离子体中的一定的氢含量导致与电子载流子密度的增加有关的电阻率的改善。这种改进是由氧化物还原由于氢自由基与氧化铟（In2O3）的反应来解释的。退火后的电性能的影响证实，电阻率的改善是由于在ITO膜中的电子载流子源的氧空位的增加。氧提取在ITO膜生长的初始阶段，由于玻璃衬底表面，建议创建氧空位作为电子载流子源，用于改善薄膜的电阻率。(c)2006年，美国物理学会。
We have investigated the effect of hydrogen on the resistivity, Hall mobility, and carrier density of ITO films on glass substrates using a low-pressure plasma sputtering method. It was found that a certain hydrogen content in the Ar plasma leads to improvement in the resistivity relating to an increase in the electron carrier density. The improvement is explained by oxide reduction due to the reaction of hydrogen radicals with indium oxide (In2O3). The effect of postannealing on the electrical properties confirmed that the improvement of the resistivity is a result of an increase in oxygen vacancies as the electron carrier source in the ITO film. Oxygen extraction in the initial stages of ITO film growth, due to the glass substrate surface, is suggested to create oxygen vacancies as the electron carrier source for improvement in the resistivity of the films. (c) 2006 American Institute of Physics.