Escape length of ultraviolet induced photoelectrons in alkali iodide and CsBr evaporated films: Measurements and modeling
Escape length of ultraviolet induced photoelectrons in alkali iodide and CsBr evaporated films: Measurements and modeling
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碱金属碘化物和 CsBr 蒸发膜中紫外线诱导光电子的逃逸长度：测量和建模
DOI：
10.1063/1.368395
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发表时间：
1998
影响因子：
3.2
通讯作者：
R. Chechik
中科院分区：
文献类型：
--
作者：
T. Boutboul;A. Akkerman;A. Breskin;R. Chechik
在140-180 nm的光子光谱范围内测量了CsI、KI、RbI、NaI和CsBr蒸发薄膜光致电子的逃逸长度。逃逸长度值的理论模型预测是在公平的协议与实验结果。它们在10和40 nm之间变化，最高值为CsI、RbI和CsBr。对于碘化铯，测量和计算的紫外诱导逃逸长度值是一致的，从X射线光电子能谱量子产率数据确定。蒸发后退火的薄膜上测得的电子传输性能没有重大影响。
The escape length of electrons photoinduced from thin CsI, KI, RbI, NaI, and CsBr evaporated films was measured in the 140–180 nm photon spectral range. Theoretical model predictions of the escape length value are in fair agreement with the experimental results. They vary between 10 and 40 nm, the highest values being for CsI, RbI and CsBr. For CsI, measured and calculated ultraviolet-induced escape length values are consistent with that determined from x-ray photoemission quantum yield data. Post-evaporation annealing of the films had no major impact on the measured electron transport properties.