Influence of growth temperature and reactor pressure on microstructural and optical properties of InAlGaN quaternary epilayers
Influence of growth temperature and reactor pressure on microstructural and optical properties of InAlGaN quaternary epilayers
复制标题
DOI:
10.1016/j.jcrysgro.2004.03.061
复制
发表时间:
2004-06
影响因子:
1.8
通讯作者:
H. Cho;Kyu Han Lee;Sun Woon Kim;Keunseop Park;Yong‐Hoon Cho;Jun Hee Lee
中科院分区:
文献类型:
--
作者:
H. Cho;Kyu Han Lee;Sun Woon Kim;Keunseop Park;Yong‐Hoon Cho;Jun Hee Lee