Influence of growth temperature and reactor pressure on microstructural and optical properties of InAlGaN quaternary epilayers

Influence of growth temperature and reactor pressure on microstructural and optical properties of InAlGaN quaternary epilayers
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DOI:
10.1016/j.jcrysgro.2004.03.061
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发表时间:
2004-06
影响因子:
1.8
通讯作者:
H. Cho;Kyu Han Lee;Sun Woon Kim;Keunseop Park;Yong‐Hoon Cho;Jun Hee Lee
H. Cho;Kyu Han Lee;Sun Woon Kim;Keunseop Park;Yong‐Hoon Cho;Jun Hee Lee
中科院分区:
材料科学3区
文献类型:
--
作者:
H. Cho;Kyu Han Lee;Sun Woon Kim;Keunseop Park;Yong‐Hoon Cho;Jun Hee Lee

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