Pressure-Induced Tunable Electron Transfer and Auger Recombination Rates in CdSe/ZnS Quantum Dot-Anthraquinone Complexes
Pressure-Induced Tunable Electron Transfer and Auger Recombination Rates in CdSe/ZnS Quantum Dot-Anthraquinone Complexes
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CdSe/ZnS 量子点-蒽醌配合物中压力诱导的可调电子转移和俄歇复合率
DOI：
10.1021/acs.jpclett.9b01048
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Dajun Ding
中科院分区：
文献类型：
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作者：
Huifang Zhao;Hang Yin;Xiaochun Liu;Hui Li;Ying Shi;Cailong Liu;Mingxing Jin;Jianbo Gao;Yi Luo;Dajun Ding
量子点中的电子转移（ET）和俄歇复合（AR）过程是量子点器件发展的关键机制。然而，如何同时促进ET和抑制AR仍然是一个挑战。本文采用原位高压超快瞬态吸收光谱技术，研究了压力对CdSe/ZnS与环己烷中溶解的蒽醌（AQ）和AR之间ET的影响。值得注意的是，在压缩下，ET寿命缩短，而AR寿命受到抑制。ET的提高是由于压力导致CdSe/ZnS与AQ之间的距离缩短。我们认为，为了抑制AR，压力可能会促进芯/壳界面合金层的形成。这些结果表明，压缩是同时促进ET和抑制AR的有效方法。该研究强调了一种全新的调制ET和AR的方法，并为基于量子点的应用提供了新的途径。
Electron transfer (ET) and Auger recombination (AR) processes in quantum dots (QDs) are key mechanisms for the advance of QD-based devices. However, it still remains a challenge to promote ET and suppress AR simultaneously. Here, we use in situ high-pressure ultrafast transient absorption spectroscopy to explore the impact of pressure on the ET between CdSe/ZnS and anthraquinone (AQ) and AR dissolved in cyclohexane. Remarkably, under compression, ET lifetimes are shorten, while suppression of AR lifetimes is present. The promotion of ET is attributed to the shortened distance between CdSe/ZnS and AQ induced by pressure. We rationalize that for the AR suppression, pressure may enhance the formation of an alloy layer at the core/shell interface. These findings indicate that compression is an effective approach to promote ET and suppress AR simultaneously. This study highlights a brand-new approach for modulating ET and AR and provides new routes toward QD-based applications.