Comparison of SiGe and SiGe:C heterojunction bipolar transistors
Comparison of SiGe and SiGe:C heterojunction bipolar transistors
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DOI：
10.1016/s0040-6090(00)00866-x
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发表时间：
2000-07-03
期刊：
影响因子：
2.1
通讯作者：
Osten, HJ
中科院分区：
文献类型：
--
作者：
Knoll, D;Heinemann, B;Osten, HJ
我们比较了纯SiGe的异质结双极晶体管（SiGe HBTs）和含C掺杂SiGe基层的异质结双极晶体管（SiGe:C HBTs）的性能。晶体管是用单多晶硅技术生产的，有植入的，无外延素的井。掺杂低C浓度的SiGe层（类似于0.2%）使我们可以使用比无C的HBTs更高的碱硼剂量，而不会从异质外延层向外扩散。因此，可以显著提高器件的射频性能。SiGe:C HBTs的高基极掺杂将峰值（最大值）从50 GHz左右增加到80 GHz以上，并将最小噪声系数（在10 GHz时）从bbb3降低到2db，环形振荡器延迟从21-22降低到12-14 ps。SiGe:C HBTs还具有泄漏电流，这对于可靠的IC应用来说足够低。(C) 2000 Elsevier Science S.A.版权所有
We compare the performance of heterojunction bipolar transistors with pure SiGe (SiGe HBTs) with those incorporating C-doped SiGe base layers (SiGe:C HBTs). The transistors were produced in a single-polysilicon technology with implanted, epi-free wells. Doping the SiGe layers with low C concentration (similar to 0.2%) allows us to use a higher base boron dose than for C-free HBTs, without B outdiffusion from the heteroepitaxial layer. As a result, the device RF performance can be significantly improved. The higher base doping of SiGe:C HBTs increases the peakf(max) from around 50 up to more than 80 GHz, and reduces the minimum noise figure (at 10 GHz) from >3 to 2 dB and ring oscillator delays from 21-22 to 12-14 ps. The SiGe:C HBTs also exhibit leakage currents, which are sufficiently low for reliable IC application. (C) 2000 Elsevier Science S.A. All rights reserved.