Carbon contamination free Ge(100) surface cleaning for MBE

Carbon contamination free Ge(100) surface cleaning for MBE
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MBE 的无碳污染 Ge(100) 表面清洁

DOI:
10.1016/s0169-4332(97)00587-4
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发表时间:
1998
影响因子:
6.7
通讯作者:
S. Matsumoto
S. Matsumoto
中科院分区:
材料科学1区
文献类型:
--
作者:
H. Okumura;T. Akane;S. Matsumoto

文献摘要

被引文献

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本文提出了一种Ge(100)表面的无碳湿法处理方法。该处理包括三个步骤:(1)用H_2O_2溶液进行表面氧化和用HCl溶液进行氧化物蚀刻的几个循环;(2)通过NH_4OH/H_2O_2/H_2O处理形成保护性氧化物;(3)在超高真空中热脱附保护性氧化物。在步骤(1)之后的Ge(100)表面的原子力显微镜图像表明表面非常光滑。在步骤(2)之后,通过俄歇电子能谱测量确认保护氧化物不含碳污染。反射高能电子衍射图案表明,在步骤(3)之后,表面仅具有原子尺度的台阶。
A carbon free wet treatment for Ge(100) surface has been proposed. This treatment consists of three steps: (1) several cycles of surface oxidation with H2O2solution and the oxide etching with HCl solution, (2) the formation of protective oxide by NH4OH/H2O2/H2O treatment and (3) thermal desorption of the protective oxide in ultra high vacuum. An atomic force microscope image of the Ge(100) surface after step (1) indicates the surfaces is very smooth. After step (2), it is confirmed that the protective oxide contains no carbon contamination by Auger electron spectroscopy measurement. A reflection high energy electron diffraction pattern indicates that the surface, after step (3), has only atomic-scale steps.