Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes
Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes
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DOI：
10.1143/jjap.46.l187
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发表时间：
2007-02
影响因子：
1.5
通讯作者：
K. Okamoto;H. Ohta;S. Chichibu;J. Ichihara;H. Takasu
中科院分区：
文献类型：
--
作者：
K. Okamoto;H. Ohta;S. Chichibu;J. Ichihara;H. Takasu
研究了非极性m面InGaN/GaN半导体激光器（LD）的连续工作特性，激光波长约为400 nm。对于CW操作，阈值电流为36 mA（4.0 kA/cm 2）[对于脉冲模式，阈值电流为28 mA（3.1 kA/cm 2）]，与常规c平面紫色LD的阈值电流相当。根据应变InGaN中跃迁的偏振选择规则，具有平行于a轴和c轴的条纹的LD都显示TE模式操作。c轴条形LD表现出较低的阈值电流密度，因为允许最低的能量跃迁。与在独立的m-平面GaN块状晶体上制造的m-平面发光二极管的情况一样[Okamoto等人：JPN. J.Appl.Phys.45（2006）L1197]，本文所示的LD不具有明显的位错、堆垛层错或宏观裂纹。非极性m-面GaN基材料正在得到广泛应用。
Continuous-wave (CW) operation of nonpolar m-plane InGaN/GaN laser diodes (LDs) with the lasing wavelengths approximately 400 nm was demonstrated. The threshold current was 36 mA (4.0 kA/cm2) for the CW operation [28 mA (3.1 kA/cm2) for pulsed mode], being comparable to that of conventional c-plane violet LDs. Both the LDs with the stripes parallel to a- and c-axes showed TE mode operation, according to the polarization selection rules of the transitions in strained InGaN. The c-axis stripe LDs exhibited lower threshold current density, since the lowest energy transition is allowed. As is the case with the m-plane light emitting diodes fabricated on the free-standing m-plane GaN bulk crystals [Okamoto et al.: Jpn. J. Appl. Phys. 45 (2006) L1197], the LDs shown in this paper did not have distinct dislocations, stacking faults, or macroscopic cracks. Nonpolar m-plane GaN-based materials are coming into general use.