Crystal growth and detector performance of large size High-purity Ge crystals
Crystal growth and detector performance of large size High-purity Ge crystals
复制标题
大尺寸高纯Ge晶体的晶体生长和探测器性能
DOI：
10.1016/j.mssp.2015.04.044
复制
发表时间：
2015
影响因子：
4.1
通讯作者：
Gang Yang
中科院分区：
文献类型：
--
作者：
Guojian Wang;M. Amman;H. Mei;D. Mei;K. Irmscher;Y. Guan;Gang Yang
使用直拉法在氢气氛中生长直径约12 cm的高纯度锗晶体。晶体的位错密度被确定为在2000-4200 cm-2的范围内，这满足用作辐射检测器的要求。测量了晶体中杂质的轴向和径向分布，并进行了讨论。一个平面探测器也从一个晶体制造，然后评估的电气和光谱性能。对Cs-137和Am-241源的γ能谱测量表明，该探测器具有良好的能量分辨率。
High-purity germanium crystals approximately 12 cm in diameter were grown in a hydrogen atmosphere using the Czochralski method. The dislocation density of the crystals was determined to be in the range of 2000–4200 cm−2, which meets a requirement for use as a radiation detector. The axial and radial distributions of impurities in the crystals were measured and are discussed. A planar detector was also fabricated from one of the crystals and then evaluated for electrical and spectral performance. Measurements of gamma-ray spectra from Cs-137 and Am-241 sources demonstrate that the detector has excellent energy resolution.