Generation and characterization of femtosecond THz radiation generated from bulk InAs in a magnetic field
Generation and characterization of femtosecond THz radiation generated from bulk InAs in a magnetic field
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磁场中块状 InAs 产生的飞秒太赫兹辐射的产生和表征
DOI：
10.1109/cleo.1999.833963
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
R. Wallenstein
中科院分区：
文献类型：
--
作者：
C. Weiss;R. Beigang;R. Wallenstein
仅提供摘要形式。使用超短激光脉冲在体半导体如GaAs、InP和InAs中产生飞秒THz脉冲是一种成熟的技术。在垂直于半导体表面耗尽场的方向上施加磁场，可以显著增强发射的太赫兹功率。在这里，我们报告的相位敏感检测的飞秒太赫兹辐射产生的体n掺杂InAs的反射方向上没有外部电场的磁场的影响下。这种技术使我们能够区分由表面耗尽场产生的场分量和由磁场额外产生的辐射。通过调整这两个分量之间的相对相位，可以影响总场幅度和频谱分布。我们还提出了一个太赫兹辐射与散装InAs和偏置GaAs发射机的产生之间的比较。
Summary form only given. The generation of femtosecond THz-pulses in bulk semiconductors like GaAs, InP and InAs using ultrashort laser pulses is a well established technique. The emitted THz power can be significantly enhanced with a magnetic field applied perpendicular to the surface depletion field of the semiconductor. Here we report on the phase sensitive detection of femtosecond THz radiation that is generated in the reflection direction of bulk n-doped InAs without external electric field under the influence of a magnetic field. This technique allows us to distinguish between the field components generated by the surface depletion field and the additionally generated radiation by the magnetic field. By adjusting the relative phase between these two components the total field amplitude and the spectral distribution can be influenced. We also present a comparison between the generation of THz radiation with bulk InAs and biased GaAs transmitters.