A hybrid double-dot in silicon
A hybrid double-dot in silicon
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DOI：
10.1088/1367-2630/14/2/023050
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发表时间：
2012-02-21
影响因子：
3.3
通讯作者：
Ferguson, Andrew J.
中科院分区：
文献类型：
--
作者：
Gonzalez-Zalba, M. Fernando;Heiss, Dominik;Ferguson, Andrew J.
我们报告了硅单电子晶体管（SET）隧道势垒中单个砷掺杂原子的电学测量结果。除了进行个别掺杂剂的电特性，我们研究了通过掺杂剂和SET的系列电输运。我们测量这个混合双点的三相点，使用模拟来支持我们的结果，并表明我们可以调整两个子系统之间的静电耦合。
We report electrical measurements of a single arsenic dopant atom in the tunnel barrier of a silicon single-electron transistor (SET). In addition to performing the electrical characterization of the individual dopant, we study the series electrical transport through the dopant and SET. We measure the triple points of this hybrid double-dot, using simulations to support our results, and show that we can tune the electrostatic coupling between the two sub-systems.