Low-Temperature Photoluminescence of Sb-doped ZnO Nanowires Synthesized on Sb-coated Si Substrate by Chemical Vapor Deposition Method
Low-Temperature Photoluminescence of Sb-doped ZnO Nanowires Synthesized on Sb-coated Si Substrate by Chemical Vapor Deposition Method
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DOI：
10.1007/978-81-322-1160-0_16
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
K. Sakai;K. Ishikura;A. Fukuyama;I. Palani;M. Rao;T. Okada;T. Ikari
中科院分区：
文献类型：
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作者：
K. Sakai;K. Ishikura;A. Fukuyama;I. Palani;M. Rao;T. Okada;T. Ikari
p型ZnO晶体的制备是由开发ZnO半导体器件的需要而激发的。另一方面，众所周知，高质量的纳米尺寸的ZnO晶体可以容易地通过各种晶体生长技术获得。因此，我们尝试生长型Sb掺杂ZnO纳米线的化学气相沉积在不同的沉积温度条件下，并研究其光学性质的光致发光（PL）光谱。观察到由自由激子、与施主和结构缺陷结合的激子以及Sb掺杂形成的受主引起的多个发射峰。PL的温度依赖性证实了由于Sb掺杂的受主能级的存在，并且受主能级的激活能估计为125 meV。
The fabrication ofp-type ZnO crystal is motivated by the need to develop ZnO semiconductor devices. On the other hand, it is well-known that high-quality nano-sized ZnO crystal can be easily obtained by various crystal growth techniques. Consequently, we tried to growp-type Sb-doped ZnO nanowires by the chemical vapor deposition under various deposition temperature conditions and investigated their optical properties by photoluminescence (PL) spectroscopy. Multiple emission peaks caused by free excitons, excitons bound to donors and structural defects, and acceptors formed by Sb-doping were observed. The temperature dependence of PL confirmed the existence of acceptor level due to Sb-doping, and the activation energy of the acceptor level was estimated to be 125 meV.