The Next Generation of HV-IGBTs with Low Loss and High SOA Capability
The Next Generation of HV-IGBTs with Low Loss and High SOA Capability
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DOI：
10.1109/ispsd.2008.4538919
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发表时间：
2008-05
期刊：
影响因子：
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通讯作者：
K. Nakamura;K. Hatori;Y. Hisamoto;S. Sakamoto;T. Harada;K. Hatade
中科院分区：
文献类型：
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作者：
K. Nakamura;K. Hatori;Y. Hisamoto;S. Sakamoto;T. Harada;K. Hatade
为了提高3300~6500V高压IGBT的整体性能，采用了双组合结构：发射极侧采用“增强型平面栅极单元”，集电侧采用“光穿透”结构。与传统的平面IGBT相比，LPT-Planar IGBT具有更低的导通电压(VCE(Sat))、更低的关断损耗(Eoff)和更低的结漏电流(>；398K)，并具有更高的安全工作区(SOA)能力。此外，该器件还实现了高电压IGBT的宽工作结温度(即218~423K)，而不存在突跳现象(398K)。从低总损耗、高SOA能力和宽工作结温的角度来看，LPT-Planar IGBT是一种很有前途的高压IGBT候选器件。
In order to improve the total performance of the 3300~6500 V high-voltage (HV) IGBT, a double combination concept is adopted: an "enhanced planar gate cell" for the emitter side and a "light punch-through (LPT)" structure for the collector side. The LPT-Planar IGBT demonstrates lower on-state voltage (VCE(sat)), lower turn-off loss (EOFF) and lower junction leakage current (>398 K) with higher safety operation area (SOA) capability than that of conventional Planar IGBT. In addition, this device achieves a widely operating junction temperature (i.e. 218 ~ 423 K) of the HV-IGBT without the snap-back phenomenon (398 K). From the viewpoint of low overall loss, high SOA capability and widely operating junction temperature, the LPT-Planar IGBT is a promising candidate for HV-IGBT.