7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering
7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering
复制标题
通过接口充电工程实现 7.6 V 阈值电压高性能常断 Al2O3/GaN MOSFET
DOI：
10.1109/led.2015.2511026
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发表时间：
2016-02-01
影响因子：
4.9
通讯作者：
Zhang, Bo
中科院分区：
文献类型：
--
作者：
Zhou, Qi;Liu, Li;Zhang, Bo
一种有效的方法来工程的Al 2 O3/GaN正界面固定电荷的后介质退火在氮气中被证明。观察到界面固定电荷从1.44 × 10 ~（13）cm ~（-2）显著减少到3 × 10 ~（12）cm ~（-2），这导致在Al_2 O_3/GaN MOSFET中获得了7.6V的创纪录的高阈值电压（V-TH）。显著减少的界面固定电荷和相应的远程散射效应使得电子迁移率得到可观的改善，这导致器件中355 mA/mm 2的高漏极电流密度。这些有竞争力的结果表明，在这封信中报道的方法是有前途的，在推动V-TH更积极的，同时实现良好的器件性能的常关型GaN功率器件。
An efficient approach to engineering the Al2O3/GaN positive interface fixed charges by post-dielectric annealing in nitrogen is demonstrated. The remarkable reduction of interface fixed charges from 1.44 x 10(13) to 3 x 10(12) cm(-2) was observed, which leads to a record high threshold voltage (V-TH) of 7.6 V obtained in the Al2O3/GaN MOSFETs. The significantly reduced interface fixed charges and the corresponding remote scattering effect enable respectable improvement in the electron mobility that results in a high drain current density of 355 mA/mm in the device. These competitive results reveal that the method reported in this letter is promising in pushing V-TH more positive and simultaneously achieving good device performance of normally-off GaN power devices.