Infiltration behavior of molten Mg and its influence on microstructural evolution in SiC-doped MgB2 wires prepared by internal Mg diffusion
Infiltration behavior of molten Mg and its influence on microstructural evolution in SiC-doped MgB2 wires prepared by internal Mg diffusion
复制标题
内镁扩散法制备的 SiC 掺杂 MgB2 丝中熔融镁的渗透行为及其对微观结构演变的影响
DOI:
10.1016/j.jallcom.2018.01.012
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发表时间:
2018
影响因子:
6.2
通讯作者:
Hiroaki Kumakura
中科院分区:
文献类型:
--
作者:
Yusuke Shimada;Satoshi Hata;Ken-ichi Ikeda;Hideharu Nakashima;Akiyoshi Matsumoto;Kazumasa Togano;Hiroaki Kumakura
We elucidate the microstructural evolution in MgB2wires fabricated at two different temperatures by the internal Mg diffusion (IMD) method via multiple-scale microstructural observations. The critical current (Ic) of MgB2wire was enhanced by the IMD method; however, theIcof MgB2was not sufficiently high to allow its practical applications. To prepare MgB2by the IMD method, molten Mg is required to infiltrate the gaps between the B grains and penetrate each B grain. Here, we suggest that controlling the infiltration and penetration behaviors of Mg are key to enhancing theIcof MgB2fabricated by the IMD method. One reason for the decrease inIcis the existence of residual B grains in the MgB2crystalline region, which has an area fraction of 25% even in the MgB2wire exhibiting the highestIc. The amount of residual B grains, which formed due to the insufficient penetration distance of Mg atoms in the B grain, decreased after high-temperature treatment. However, the microstructure of the MgB2wire fabricated at a temperature higher than the melting point of Mg was non-uniform because Mg infiltrated the gap between the B grains rapidly and non-uniformly. Thus, optimization of heat treatment temperature can effectively control the infiltration and penetration of Mg in the B grains, yielding uniform microstructures.