Current status of GaN crystal growth by sublimation sandwich technique
Current status of GaN crystal growth by sublimation sandwich technique
复制标题
升华夹层技术生长GaN晶体的现状
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
H. Juergensen
中科院分区：
文献类型：
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作者：
P. Baranov;E. Mokhov;A. O. Ostroumov;M. Ramm;M. S. Ramm;V. Ratnikov;A. Roenkov;Y. Vodakov;A. Wolfson;G. Saparin;S. Karpov;D. Zimina;Y. Makarov;H. Juergensen
本文讨论了使用升华三明治技术生长 GaN 晶体的现状。我们使用建模来分析反应器中的气体动力学以及在实验中使用的生长条件下向生长池中供应主要气态物质。该模型考虑了生长过程的重要特征——氨的非平衡裂解、氨在生长表面的部分粘附以及GaN热分解的动力学限制。使用 Ga/GaN 混合物作为 III 族元素源，在氨气氛中在蓝宝石和 6H-SiC 衬底上进行生长。尺寸为 15 · 15 mm、厚度达 0.5 mm 的 GaN 单晶通常以 0.25-0.35 mm/h 的优化生长速率生长。 GaN晶体通过光致发光、彩色阴极发光扫描电子显微镜技术、微分双晶和三晶X射线衍射以及电子顺磁共振来表征。讨论了 GaN 升华生长的机制以及生长过程的物理限制。
The current status of GaN crystal growth using the Sublimation Sandwich Technique is discussed in the paper. We use modeling to analyze gas dynamics in the reactor and the supply of the main gaseous species into the growth cell under growth conditions used in experiments. Important features of growth process — non-equilibrium cracking of ammonia, partial sticking of ammonia at the growing surface and kinetic limitation of GaN thermal decomposition — are taken into account in the model. Growth is carried out on sapphire and 6H-SiC substrates in ammonia atmosphere using a Ga/GaN mixture as the group-III element source. Single crystals of GaN of size 15 · 15 mm and up to 0.5 mm thick are normally grown with the optimized growth rates of 0.25-0.35 mm/h. The GaN crystals are characterized by photoluminescence, by the Color Cathodoluminescence Scanning Electron Microscopy technique, by differential double-crystal and triple-crystal X-ray diffractometry, and by electron paramagnetic resonance. Mechanisms of sublimation growth of GaN and physical limitations of the growth process are discussed.