Scalable metal oxide functionalized GaN nanowire for precise SO2 detection
Scalable metal oxide functionalized GaN nanowire for precise SO2 detection
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DOI：
10.1016/j.snb.2020.128223
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发表时间：
2020-09-01
影响因子：
8.4
通讯作者：
Rao, Mulpuri, V
中科院分区：
文献类型：
--
作者：
Khan, Md Ashfaque Hossain;Thomson, Brian;Rao, Mulpuri, V
在这项工作中，GaN纳米线已形成在Si衬底上使用生产标准的步进光刻和自顶向下的方法。三种不同的功能化器件的制备通过沉积金属氧化物ZnO，WO 3和SnO 2通过优化的RF溅射纳米线，然后快速热退火。利用EDS、XRD、AFM和SEM对金属氧化物/GaN纳米线的元素组成、结晶度和表面形貌进行了表征。收集并分析所有三种传感器的SO2气体传感数据。ZnO/GaN传感器被认为是精确的SO2检测的最佳候选者。为了研究ZnO/GaN传感器器件的实际应用性，研究了其附加传感特性，包括气体传感吸附和解吸速率、对干扰气体的交叉敏感性以及在各种环境条件下的长期稳定性。此外，主成分分析已被执行，以解决交叉敏感行为的ZnO。并对金属氧化物/GaN在紫外光照射下的SO2敏感机理进行了讨论。结果表明，ZnO功能化的GaN纳米线可以作为一个高性能的SO2传感器。
In this work, GaN nanowires have been formed on Si substrate using production standard stepper lithography and top-down approach. Three different functionalized devices were prepared by the deposition of metal oxidesZnO, WO3 and SnO2 by optimized RF sputtering on nanowires followed by rapid thermal annealing. The elemental composition, crystallinity and surface topography of metal-oxide/GaN nanowires were fully characterized by EDS, XRD, AFM and SEM. The SO2 gas sensing data was collected and analyzed for all three sensors. The ZnO/GaN sensor was found to be the best candidate for precise SO2 detection. To examine the real-world applicability of ZnO/GaN sensor device, its additional sensing properties, including gas sensing adsorption and desorption rate, cross-sensitivity to interfering gases, and long-term stability at various environmental conditions were investigated. Furthermore, principal component analysis has been performed to address the cross-sensitive behavior of ZnO. The SO2 sensing mechanism on metal-oxide/GaN under UV irradiation was discussed as well. Results demonstrate that ZnO functionalized GaN nanowire can be employed as a high performance SO2 sensor.