Growth and Fabrication of High-Quality Single Nanowire Devices with Radial p-i-n Junctions.
Growth and Fabrication of High-Quality Single Nanowire Devices with Radial p-i-n Junctions.
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DOI：
10.1002/smll.201803684
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发表时间：
2018-12
期刊：
影响因子：
13.3
通讯作者：
Yunyan Zhang;A. Sánchez;M. Aagesen;S. Huo;H. Fonseka;James A. Gott;Dongyoung Kim;Xuezhe Yu;Xing-you Chen;Jia Xu;Tianyi Li;Haotian Zeng;Giorgos Boras;Huiyun Liu
中科院分区：
文献类型：
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作者：
Yunyan Zhang;A. Sánchez;M. Aagesen;S. Huo;H. Fonseka;James A. Gott;Dongyoung Kim;Xuezhe Yu;Xing-you Chen;Jia Xu;Tianyi Li;Haotian Zeng;Giorgos Boras;Huiyun Liu
具有径向p-i-n结的纳米线具有结面积大、表面态影响小等优点，可以实现高效的材料利用和良好的器件量子效率。然而，高质量的核壳型NW器件，特别是单晶NW器件的制作难度较大。本文以GaAs(P) NW光伏为例，研究了影响单核-壳P -i-n NW器件质量的生长和制造过程中的关键因素。通过p掺杂和退火，在直径小至50-60 nm的NWs上实现了良好的欧姆接触。随后开发了单个NW光伏电池，并显示了80.5%的创纪录填充系数。这些结果为制作单个NW器件提供了有价值的信息，可以进一步促进高密度集成电路的发展。
Nanowires (NWs) with radial p-i-n junction have advantages, such as large junction area and small influence from the surface states, which can lead to highly efficient material use and good device quantum efficiency. However, it is difficult to make high-quality core-shell NW devices, especially single NW devices. Here, the key factors during the growth and fabrication process that influence the quality of single core-shell p-i-n NW devices are studied using GaAs(P) NW photovoltaics as an example. By p-doping and annealing, good ohmic contact is achieved on NWs with a diameter as small as 50-60 nm. Single NW photovoltaics are subsequently developed and a record fill factor of 80.5% is shown. These results bring valuable information for making single NW devices, which can further benefit the development of high-density integration circuits.