Photoemission study of energy-band alignments and gap-state density distributions for high-k dielectrics
Photoemission study of energy-band alignments and gap-state density distributions for high-k dielectrics
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DOI：
10.1116/1.1418405
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发表时间：
2001-11-01
影响因子：
1.4
通讯作者：
Miyazaki, S
中科院分区：
文献类型：
--
作者：
Miyazaki, S;Miyazaki, S
从o1s（或n1s）光电子的能量损失谱出发，证明了薄栅绝缘体能带隙的确定。在金属和Si（100）上形成的Ta2O5、Al2O3和ZrO2等高介电常数（高k）薄介电体的价带排列也通过测量价带态密度曲线之间的能量差来确定。金属/高k介电体/Si（100）系统的能带图通过考虑系统中测量的带隙、价带排列、电子亲和和金属功函数得到了明确的推导。结果还表明，总光电子产率谱可用于量化高k栅极介质和介电/Si（100）界面缺陷态在整个Si带隙内的能量分布。(C) 2001美国真空学会。
The determination of the energy band gaps of thin-gate insulators has been demonstrated from the onsets of the energy-loss spectra of O 1s (or N 1s) photoelectrons. The valence-band lineups of thin high-dielectric-constant (high-k) dielectrics such as Ta2O5, Al2O3, and ZrO2 formed on metals and Si(100) have also been determined by measuring the energy difference between the valence-band density-of-states curves. The energy band diagrams for metal/high-k dielelectrics/Si(100) systems have been derived explicitly from considering the measured band gaps, valence-band lineups, electron affinities, and metal work functions in the systems. It is also demonstrated that total photoelectron yield spectroscopy can be used to quantify the energy distributions of both the defect states in high-k gate dielectrics and at the dielectric/Si(100) interfaces over the entire Si band gap without gate formation. (C) 2001 American Vacuum Society.