On the RF Series Resistance Extraction of Nanoscale MOSFETs
On the RF Series Resistance Extraction of Nanoscale MOSFETs
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DOI：
10.1109/lmwc.2008.2003472
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发表时间：
2008-10
影响因子：
3
通讯作者：
G. Choi;S. Hong;Sung-Woo Jung;Y. Jeong
中科院分区：
文献类型：
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作者：
G. Choi;S. Hong;Sung-Woo Jung;Y. Jeong
提出了一种基于低频s参数测量的-0.1毫安金属氧化物半导体场效应晶体管串联电阻提取新方法。从测量和仿真两方面分析了传统方法的实用局限性。从这个分析中，导出了解析表达式，并使用线性回归技术提取串联电阻。该方法提高了测量精度，降低了测量频率。
A new extraction method of series resistance based on the radio frequency S-parameter measurement for sub -0.1 mum metal oxide semiconductor field-effect transistor is presented. The practical limit of conventional methods is analyzed from measurement and simulation. From this analysis, analytical expressions are derived, and linear regression techniques are used to extract the series resistances. The proposed method improves the accuracy and reduces the measurement frequency.