High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers
High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers
复制标题
DOI：
10.1063/1.4963831
复制
发表时间：
2016-10-07
影响因子：
3.2
通讯作者：
Sitar, Z.
中科院分区：
文献类型：
--
作者：
Franke, A.;Hoffmann, M. P.;Sitar, Z.
介绍了用于垂直腔面发射激光器和极化子激光器的UV-C分布布拉格反射器（DBRs）。通过平衡在Al0.85Ga0.35N模板上生长的多层堆叠的单层之间存在的拉伸和压缩应变，可以保持多达25层AlN/Al0.65Ga0.35N dbr的结构完整性。通过比较在低位错密度AlN和AlGaN模板上生长的dbr的结构和光学性能，推导了厚氮化Bragg反射镜裂纹塑性松弛的判据。发现临界厚度主要受DBR生长过程中累积应变能的限制，而位错对临界厚度的影响很小。在273 nm处的反射率为97.7%。所展示的光学质量和调谐谐振器和微腔结构的共振波长的能力为UV-C垂直发射器开辟了新的机会。AIP出版社出版。
UV-C distributed Bragg reflectors (DBRs) for vertical cavity surface emitting laser applications and polariton lasers are presented. The structural integrity of up to 25 layer pairs of AlN/Al0.65Ga0.35N DBRs is maintained by balancing the tensile and compressive strain present between the single layers of the multilayer stack grown on top of an Al0.85Ga0.35N template. By comparing the structural and optical properties for DBRs grown on low dislocation density AlN and AlGaN templates, the criteria for plastic relaxation by cracking thick nitride Bragg reflectors are deduced. The critical thickness is found to be limited mainly by the accumulated strain energy during the DBR growth and is only negligibly affected by the dislocations. A reflectance of 97.7% at 273 nm is demonstrated. The demonstrated optical quality and an ability to tune the resonance wavelength of our resonators and microcavity structures open new opportunities for UV-C vertical emitters. Published by AIP Publishing.