Theory of THz emission from optically excited semiconductors in crossed electric and magnetic fields
Theory of THz emission from optically excited semiconductors in crossed electric and magnetic fields
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交叉电场和磁场中光激发半导体的太赫兹发射理论
DOI：
10.1103/physrevb.62.5003
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发表时间：
2000
影响因子：
3.7
通讯作者：
H. Haug
中科院分区：
文献类型：
--
作者：
G. Meinert;L. Bányai;P. Gartner;H. Haug
本文计算了半导体在相互交叉的电场和磁场中的飞秒带间光激发产生的相干瞬态。与LO声子的散射被认为是和复杂的相互作用之间的激发和退相进行了分析。而低于LO-声子阈值的信号没有有效地阻尼，高于阈值阻尼发生在皮秒的时间尺度上，在定性与相应的实验。
The coherent transients generated by femtosecond interband photoexcitation of a semiconductor in crossed electric and magnetic fields are calculated. The scattering with LO phonons is considered and the complex interplay between excitation and dephasing is analyzed. While below the LO-phonon threshold the signal is not effectively damped, above the threshold damping takes place on a picosecond time scale, in qualitative agreement with corresponding experiments.