Microstructures of ε-Ga2O3 thin film on (100) TiO2 substrate by mist chemical vapor deposition
Microstructures of ε-Ga2O3 thin film on (100) TiO2 substrate by mist chemical vapor deposition
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(100) TiO2 基底雾气化学气相沉积 ε-Ga2O3 薄膜的微观结构
DOI：
10.1109/imfedk48381.2019.8950694
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Yoshimoto Masahiro
中科院分区：
文献类型：
--
作者：
Tahara Daisuke;Nishinaka Hiroyuki;Arata Yuta;Shimazoe Kazuki;Yoshimoto Masahiro
采用雾气CVD法在(100)TiO2衬底上生长了斜方晶系ε-Ga2O3薄膜。 XRD和TEM表明薄膜为ε-Ga2O3和β-Ga2O3两层结构。外延取向关系确定为(001)ε-Ga2O3[010]||(1-30)β-Ga2O3[132]|| (100) TiO2[001]，通过 SAED 分析。
Orthorhombic ε-Ga2O3 film was grown on (100) TiO2substrate by mist CVD. XRD and TEM revealed that the thin film was a two-layer structure of ε- Ga2O3 and β- Ga2O3layers. Epitaxial orientation relationships were identified as (001) ε- Ga2O3 [010]||(1-30)β-Ga2O3[132]|| (100) TiO2[001] by SAED analysis.