Electron-irradiation-induced phase separation in GaSb nanoparticles
Electron-irradiation-induced phase separation in GaSb nanoparticles
复制标题
DOI：
10.1103/physrevb.70.214105
复制
发表时间：
2004-12
影响因子：
3.7
通讯作者：
H. Yasuda;H. Mori;J. G. Lee
中科院分区：
文献类型：
--
作者：
H. Yasuda;H. Mori;J. G. Lee
用透射电子显微镜研究了GaSb化合物纳米颗粒的电子辐照效应，以考察电子辐照下纳米尺度系统的结构稳定性。结果表明，当75 keV的电子辐照进行约（10-25）nm大小的GaSb颗粒保持在423 K，相分离的GaSb化合物被诱导形成两相结构，包括一个晶体锑核和一个液体镓壳。在温度高于443 K或低于363 K的GaSb纳米颗粒中，75 keV的电子辐照都不会引起相分离，在温度为363 ~ 443 K的GaSb纳米颗粒中，200 keV的电子辐照也不会引起相分离。这表明，在GaSb纳米粒子的相分离可能是由电子激发，而不是撞击位移。
Electron irradiation effects in GaSb compound nanoparticles have been studied by transmission electron microscopy, in order to examine structural stability under electron irradiation in a nanometer-sized system. It is revealed that when 75 keV electron irradiation was carried out in approximately (10–25)-nm-sized GaSb particles kept at 423 K, a phase separation of the GaSb compound was induced to form a two-phase structure consisting of a crystalline antimony core and a liquid gallium shell. The phase separation was induced neither by 75 keV electron irradiation in GaSb nanoparticles kept at more than 443 K or less than 363 K nor by 200 keV electron irradiation in particles kept from 363 to 443 K. It is suggested that the phase separation in GaSb nanoparticles may be induced by electronic excitations rather than knock-on displacements.