Surface Modification of Fine Powders by Atmospheric Pressure Plasma in a Circulating Fluidized Bed Reactor
Surface Modification of Fine Powders by Atmospheric Pressure Plasma in a Circulating Fluidized Bed Reactor
复制标题
循环流化床反应器中大气压等离子体对细粉进行表面改性
DOI：
10.1021/ie034216w
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发表时间：
2004
影响因子：
4.2
通讯作者：
S. D. Kim
中科院分区：
文献类型：
--
作者：
S. Jung;S. Park;Sounghee Park;S. D. Kim
采用常压等离子体增强化学气相沉积(PECVD)技术对氧化铝微粉(60μm)进行了表面改性。乘以1米高)。采用环形电极，在13.56 MHz的电源频率下，实现了大气压下稳定的辉光放电。用FTIR-ATR、XPS和SEM-EDS对TEOS/O2等离子体沉积的氧化铝薄膜进行了表征。有机硅薄膜SiOxCyHZ是在常压下用TEOS等离子体沉积的。薄膜的FTIR谱在1072、800和450 cm-1附近出现了SiO_2的三个特征谱带。随着输入功率的增加，这些CH和Si−C键消失。输入功率和反应气体中的氧含量控制沉积膜中的碳和氧含量。颗粒表面沉积的膜层均匀分布，膜层厚度约为2−4μm。
Surface modification of fine alumina powders (60 μm) by plasma-enhanced chemical vapor deposition (PECVD) at atmospheric pressure was carried out in a circulating fluidized bed reactor (18 mm i.d. by 1 m height). A stable glow discharge under atmospheric pressure can be attained successfully at a source frequency of 13.56 MHz with ring-shaped electrodes. The deposited thin film on alumina powder from TEOS/O2 plasma was characterized by FTIR-ATR, XPS, and SEM-EDS. The organic silicon films, SiOxCyHz, are deposited by TEOS plasmas at atmospheric pressure. The FTIR spectra of deposited films exhibit the three characteristic bands of SiO2 near 1072, 800, and 450 cm-1. These CH and Si−C bonds disappear with increasing input power. Input power and oxygen content in the reaction gas control carbon and oxygen contents in the deposited film. The film deposition on the particle surface is evenly distributed, and the layer thickness is approximately 2−4 μm.