ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection
ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection
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DOI：
10.1063/1.3551628
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发表时间：
2011-01
影响因子：
4
通讯作者：
Guoping Wang;S. Chu;Ning Zhan;Yuqing Lin;L. Chernyak;Jianlin Liu
中科院分区：
文献类型：
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作者：
Guoping Wang;S. Chu;Ning Zhan;Yuqing Lin;L. Chernyak;Jianlin Liu
采用化学气相沉积（CVD）和分子束外延（MBE）相结合的方法生长了基于Sb掺杂p型纳米线阵列和n型薄膜的ZnO异质p-n结。铟锡氧化物和Ti/Au分别用作ZnO纳米线和薄膜的接触。使用ZnO纳米线作为沟道的场效应晶体管的特性指示纳米线的p型导电性。电子束感生电流分布证实了ZnO p-n同质结的存在。整流的I-V特性显示了约3 V的开启电压。从光电流测量中观察到对紫外光照射的非常好的响应。
ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy (for film). Indium tin oxide and Ti/Au were used as contacts to the ZnO nanowires and film, respectively. Characteristics of field-effect transistors using ZnO nanowires as channels indicate p-type conductivity of the nanowires. Electron beam induced current profiling confirmed the existence of ZnO p-n homojunction. Rectifying I-V characteristic showed a turn-on voltage of around 3 V. Very good response to ultraviolet light illumination was observed from photocurrent measurements.