Inverse proximity effect in semiconductor Majorana nanowires.
Inverse proximity effect in semiconductor Majorana nanowires.
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DOI：
10.3762/bjnano.9.109
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发表时间：
2018
影响因子：
3.1
通讯作者：
Mel'nikov AS
中科院分区：
文献类型：
--
作者：
Kopasov AA;Khaymovich IM;Mel'nikov AS
我们研究的影响的逆邻近效应的混合结构中的超导成核的半导体纳米线放置在接触一个薄的超导膜，并讨论由此产生的限制马约拉纳为基础的设备的操作。强顺磁效应的电子进入半导体与自旋轨道耦合和货车霍韦奇异性的电子态密度的线是负责抑制超导关联在低场域和重入超导在高磁场中的拓扑非平凡制度。在后一种情况下，临界温度的增长继续到上临界场，由于轨道或顺磁机制，破坏了超导膜内部的配对。在拓扑和非拓扑区域之间的边界附近的均匀超导态的抑制提供了有利于Fulde-Ferrel-Larkin-Ovchinnikov不稳定性的条件。
We study the influence of the inverse proximity effect on the superconductivity nucleation in hybrid structures consisting of semiconducting nanowires placed in contact with a thin superconducting film and discuss the resulting restrictions on the operation of Majorana-based devices. A strong paramagnetic effect for electrons entering the semiconductor together with spin–orbit coupling and van Hove singularities in the electronic density of states in the wire are responsible for the suppression of superconducting correlations in the low-field domain and for the reentrant superconductivity at high magnetic fields in the topologically nontrivial regime. The growth of the critical temperature in the latter case continues up to the upper critical field destroying the pairing inside the superconducting film due to either orbital or paramagnetic mechanism. The suppression of the homogeneous superconducting state near the boundary between the topological and non-topological regimes provides the conditions favorable for the Fulde–Ferrel–Larkin–Ovchinnikov instability.
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