Generic Radiation Hardened Photodiode Layouts for Deep Submicron CMOS Image Sensor Processes
Generic Radiation Hardened Photodiode Layouts for Deep Submicron CMOS Image Sensor Processes
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DOI：
10.1109/tns.2011.2171502
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发表时间：
2011-11
影响因子：
1.8
通讯作者：
V. Goiffon;P. Cervantes;C. Virmontois;F. Corbière;P. Magnan;M. Estribeau
中科院分区：
文献类型：
--
作者：
V. Goiffon;P. Cervantes;C. Virmontois;F. Corbière;P. Magnan;M. Estribeau
选定的抗辐射光电二极管布局采用深亚微米cmos图像传感器技术制造，由高达2.2mrad(二氧化硅)的60Coγ射线照射，并进行研究，以确定最有效的结构和使其在此类技术中高效工作所需遵循的准则(凹槽距离、偏置电压)。为此，使用了光电二极管阵列和有源像素传感器。在2.2mrad(SiO_2)辐照后，所研究的传感器功能完全正常，大多数抗辐射的光电二极管的辐射感生暗电流值比标准光电二极管低一个数量级以上。
Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co γ-rays up to 2.2 Mrad (SiO2) and studied in order to identify the most efficient structures and the guidelines (recess distance, bias voltage) to follow to make them work efficiently in such technology. To do so, both photodiode arrays and active pixel sensors are used. After 2.2 Mrad (SiO2), the studied sensors are fully functional and most of the radiation hardened photodiodes exhibit radiation induced dark current values more than one order of magnitude lower than the standard photodiode.