Phenomenological band structure model of magnetic coupling in semiconductors
Phenomenological band structure model of magnetic coupling in semiconductors
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DOI：
10.1016/j.ssc.2006.03.002
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发表时间：
2006-01-01
影响因子：
2.1
通讯作者：
Fazzio, A.
中科院分区：
文献类型：
--
作者：
Dalpian, Gustavo M.;Wei, Su-Huai;Fazzio, A.
提出了统一的能带结构模型来解释锰掺杂半导体中的磁有序性。该模型基于 Mn 离子和主体元素之间的 p-d 和 d-d 能级排斥力，可以成功解释在所有 Mn 掺杂 II-VI 和 III-V 半导体（如 CdTe、GaAs、ZnO 和 GaN）中观察到的磁有序。该模型还可用于解释 GaMnN 的有趣行为，即随着 Mn 浓度的增加，GaMnN 从铁磁有序变为反铁磁有序。因此，该模型有助于为未来磁性半导体的能带结构工程提供简单的指导。 (c) 2006 Elsevier Ltd. 保留所有权利。
A unified band structure model is proposed to explain the magnetic ordering in Mn-doped semiconductors. This model is based on the p-d and d-d level repulsions between the Mn ions and host elements and can successfully explain magnetic ordering observed in all Mn doped II-VI and III-V semiconductors such as CdTe, GaAs, ZnO, and GaN. The model can also be used to explain the interesting behavior of GaMnN, which changes from ferromagnetic ordering to antiferromagnetic ordering as the Mn concentration increases. This model, therefore, is useful to provide a simple guideline for future band structure engineering of magnetic semiconductors. (c) 2006 Elsevier Ltd. All rights reserved.