Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion
Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion
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DOI：
10.1063/1.3025892
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发表时间：
2008-11
影响因子：
4
通讯作者：
M. Naganawa;Y. Shimizu;M. Uematsu;K. Itoh;K. Sawano;Y. Shiraki;E. Haller
中科院分区：
文献类型：
--
作者：
M. Naganawa;Y. Shimizu;M. Uematsu;K. Itoh;K. Sawano;Y. Shiraki;E. Haller
用As注入的Ge同位素超晶格同时研究了Ge和As的扩散。没有观察到注入损伤可能引起的As的瞬时增强扩散。由于费米能级效应，Ge的自扩散与载流子浓度呈二次关系。通过数值模拟精确地再现Ge和As的扩散分布，我们得出结论：双负电荷空位是本征Ge中95%以上的自扩散的主要点缺陷，并且在n型Ge中这一比例进一步增加。
Diffusion of germanium (Ge) and arsenic (As) has been investigated simultaneously using As-implanted Ge isotope superlattices. No transient enhanced diffusion of As that could have arisen by the implantation damage is observed. A quadratic dependence of the Ge self-diffusion on the carrier concentration due to the Fermi level effect is observed. A precise reproduction of the Ge and As diffusion profiles by a numerical simulator lets us conclude that doubly negatively charged vacancies are the dominant point defects responsible for more than 95% of the self-diffusion in intrinsic Ge and this fraction increases even further in n-type Ge.