Impurity induced non-bulk stacking in chemically exfoliated h-BN nanosheets.
Impurity induced non-bulk stacking in chemically exfoliated h-BN nanosheets.
复制标题
DOI：
10.1039/c3nr33375b
复制
发表时间：
2013-03
期刊：
影响因子：
6.7
通讯作者：
A. Shmeliov;Judy S. Kim;K. B. Borisenko;Peng Wang;E. Okunishi;M. Shannon;A. Kirkland;P. Nellist-
中科院分区：
文献类型：
--
作者：
A. Shmeliov;Judy S. Kim;K. B. Borisenko;Peng Wang;E. Okunishi;M. Shannon;A. Kirkland;P. Nellist-
二维纳米材料的结构表征是其未来应用的重要一步。在这项工作中，我们进行了成像和结构分析的二维h-BN化学剥离产生的，强调在几层片的堆叠顺序。我们的分析，第一次确凿地表明，非散装堆叠可以存在于二维h-BN。
Structural characterization of 2D nanomaterials is an important step towards their future applications. In this work we carried out imaging and structural analysis of 2D h-BN produced by chemical-exfoliation, emphasizing the stacking order in few-layer sheets. Our analysis, for the first time has shown conclusively that non-bulk stacking can exist in 2D h-BN.