Thickness dependence of the martensitic transformation, magnetism, and magnetoresistance in epitaxial Ni-Mn-Sn ultrathin films
Thickness dependence of the martensitic transformation, magnetism, and magnetoresistance in epitaxial Ni-Mn-Sn ultrathin films
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DOI：
10.1103/physrevb.85.214118
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发表时间：
2012-06-19
影响因子：
3.7
通讯作者：
Schattschneider, P.
中科院分区：
文献类型：
--
作者：
Auge, A.;Teichert, N.;Schattschneider, P.
以Ni-Mn-Sn薄膜为例，研究了薄膜厚度对马氏体相变的影响。通过在加热的衬底上共溅射，在MgO上沉积厚度从100 nm到10 nm的外延膜。使用随温度变化的X射线衍射、磁化强度和电阻率测量来研究马氏体转变。用X射线衍射和透射电子显微镜研究了薄膜的生长和马氏体结构。研究发现，随着薄膜厚度的减小，马氏体相变温度降低，相变范围增大。我们表明，转换仍然是可能的，到10 nm的膜厚度。对马氏体相变引起的电阻变化的系统研究表明，在靠近MgO界面处，相变受到抑制。
We investigate the influence of the film thickness on the martensitic transformation for the example of Ni-Mn-Sn thin films. Epitaxial films with thicknesses ranging from 100 nm down to 10 nm were deposited on MgO by co-sputtering on heated substrates. The martensitic transformation is investigated using temperature dependent x-ray diffraction, magnetization and resistivity measurements. X-ray diffraction and transmission electron microscopy is used to study the growth and the martensitic structure of the films. We find that the martensitic transformation temperatures reduce and the transformation range increases with decreasing film thickness. We show that the transformation is still possible down to a film thickness of 10 nm. A systematic study on the resistance change caused by the martensitic transformation implies that the transformation is suppressed close to the interfaces to the MgO.