Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes
Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes
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DOI：
10.1002/smll.201300134
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发表时间：
2013-10-11
期刊：
影响因子：
13.3
通讯作者：
Ko, Heung Cho
中科院分区：
文献类型：
--
作者：
Yoon, Jongwon;Park, Woojin;Ko, Heung Cho
基于剥离的MoS 2沟道和CVD生长的石墨烯源/漏电极开发了高度柔性和透明的晶体管。引入2D纳米材料提供了高的机械柔性、光学透射率（约74%）和电流开/关比（>10（4）），平均场效应迁移率约为4.7cm（2）V-1 s（-1），所有这些都不能通过由MoS 2有源沟道/金属电极或石墨烯沟道/石墨烯电极组成的其他晶体管实现。特别地，在MoS 2/石墨烯界面处形成低肖特基势垒（约22 meV），这与MoS 2/金属界面相当。在压缩和拉伸模式下弯曲至+/-2.2 mm时器件的电子性能的高稳定性，以及在退火后降解后恢复电性能的能力，揭示了使用2D材料用于创建高度柔性和透明器件的功效。
A highly flexible and transparent transistor is developed based on an exfoliated MoS2 channel and CVD-grown graphene source/drain electrodes. Introducing the 2D nanomaterials provides a high mechanical flexibility, optical transmittance (approximate to 74%), and current on/off ratio (>10(4)) with an average field effect mobility of approximate to 4.7 cm(2) V-1 s(-1), all of which cannot be achieved by other transistors consisting of a MoS2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, a low Schottky barrier (approximate to 22 meV) forms at the MoS2/graphene interface, which is comparable to the MoS2/metal interface. The high stability in electronic performance of the devices upon bending up to +/- 2.2 mm in compressive and tensile modes, and the ability to recover electrical properties after degradation upon annealing, reveal the efficacy of using 2D materials for creating highly flexible and transparent devices.