CE3BI4PT3 AND HYBRIDIZATION GAP PHYSICS
CE3BI4PT3 AND HYBRIDIZATION GAP PHYSICS
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DOI：
10.1016/0925-8388(92)90333-5
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发表时间：
1992-04-03
影响因子：
6.2
通讯作者：
HUNDLEY, MF
中科院分区：
文献类型：
--
作者：
FISK, Z;CANFIELD, PC;HUNDLEY, MF
综述了Ce3Bi4Pt3的基本热力学和输运性质。 虽然磁化率显示一个典型的混合价温度依赖性，电阻，热电功率和比热是那些与小间隙半导体，其中差距是由于杂化的重整化f和传导电子。 除此之外，一个令人惊讶的磁化率和热膨胀之间的相关性，以及一个简单的理论框架内，可以看到的杂交间隙系统。
Basic thermodynamic and transport properties of Ce3Bi4Pt3 are reviewed. Although the susceptibility displays a canonical mixed valence temperature dependence, the electrical resistance, thermoelectric power and specific heat are those associated with a small gap semiconductor in which the gap is due to hybridization of the renormalized f and conduction electrons. In addition to this, a surprising correlation between the magnetic susceptibility and the thermal expansion as well as a simple theoretical framework within which hybridization-gapped systems can be viewed are presented.