Approaching intrinsic performance in ultra-thin silicon nitride drum resonators
Approaching intrinsic performance in ultra-thin silicon nitride drum resonators
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DOI：
10.1063/1.4754576
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发表时间：
2012-09
影响因子：
3.2
通讯作者：
V. Adiga;B. Ilic;Robert A. Barton;I. Wilson-Rae;H. Craighead;J. Parpia
中科院分区：
文献类型：
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作者：
V. Adiga;B. Ilic;Robert A. Barton;I. Wilson-Rae;H. Craighead;J. Parpia
我们已经制造了不同直径（20 μm至1 mm）和厚度（15 nm-75 nm）的圆形氮化硅鼓使用电子束光刻和测量这些非晶氮化硅谐振器的耗散（Q-1）使用光学干涉检测。我们观察到，耗散是强烈依赖于模式类型相对较大，厚膜预测的电流模型的耗散，由于箝位损耗。然而，对于更小或更薄的谐振器，这种依赖性急剧降低，对于低阶模式，更薄的谐振器显示出更高的品质因数。这些薄谐振器可以达到的最高品质因数似乎受到内在机制的限制，并且与膜的直径成线性比例。我们的研究结果是有希望的质量传感和光学机械应用中，低质量和高Q值是可取的。
We have fabricated circular silicon nitride drums of varying diameter (20 μm to 1 mm) and thickness (15 nm–75 nm) using electron beam lithography and measured the dissipation (Q−1) of these amorphous silicon nitride resonators using optical interferometric detection. We observe that the dissipation is strongly dependent on mode type for relatively large, thick membranes as predicted by the current models of dissipation due to clamping loss. However, this dependence is drastically reduced for smaller or thinner resonators, with thinner resonators showing higher quality factors, for low order modes. Highest quality factors that can be reached for these thin resonators seems be limited by an intrinsic mechanism and scales linearly with the diameter of the membrane. Our results are promising for mass sensing and optomechanical applications where low mass and high Qs are desirable.