Ripple structures on surfaces and underlying crystalline layers in ion beam irradiated Si wafers
Ripple structures on surfaces and underlying crystalline layers in ion beam irradiated Si wafers
复制标题
离子束辐照硅片表面和底层晶体层的波纹结构
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
U. Pietsch
中科院分区：
文献类型：
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作者：
J. Grenzer;A. Biermanns;A. Mücklich;S. Grigorian;U. Pietsch
本文报道了能量为60 keV的Ar ~+离子轰击Si（001）晶片时，在其表面上形成的离子束感生波纹。通过两种互补的近表面敏感技术，即原子力显微镜和深度分辨X射线掠入射衍射（GID），研究了一组不同入射角和离子束相对于晶体表面取向的方位角的样品。此外，还进行了横截面TEM研究。涟漪状结构形成在样品表面以及掩埋的非晶-结晶界面处。当照射离子束平行于（111）面时，发现涟漪图案的质量最好。如果离子束的方向偏离（111），则质量迅速降低。
We report on the formation of ion beam induced ripples in Si(001) wafers when bombarded with Ar+ ions at an energy of 60 keV. A set of samples varying incidence and azimuthal angles of the ion beam with respect to the crystalline surface orientation was studied by two complementary near surface sensitive techniques, namely atomic force microscopy and depth‐resolved X‐ray grazing incidence diffraction (GID). Additionally, cross‐section TEM investigations were carried out. The ripple‐like structures are formed at the sample surface as well as at the buried amorphous–crystalline interface. Best quality of the ripple pattern was found when the irradiating ion beam was aligned parallel to the (111) planes. The quality decreases rapidly if the direction of the ion beam deviates from (111).