Visualization of induced charge in an organic thin-film transistor by cross-sectional potential mapping
Visualization of induced charge in an organic thin-film transistor by cross-sectional potential mapping
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DOI：
10.1063/1.2734077
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发表时间：
2007-05
影响因子：
3.2
通讯作者：
S. Ikeda;T. Shimada;M. Kiguchi;K. Saiki
中科院分区：
文献类型：
--
作者：
S. Ikeda;T. Shimada;M. Kiguchi;K. Saiki
将开尔文探针力显微镜应用于工作的有机薄膜晶体管(OTFT)的横截面电位成像。对具有铜酞菁(CuPc)活性层的底接触型OTFT进行了切割，并可视化了其沟道区的内电势分布。横截面上的电位分布随施加的漏极和栅极电压的不同而变化。半导体薄膜从源极到漏极方向的水平电势分布与以前报道的表面电势成像结果基本一致。从底部(栅极)到顶部(CuPc膜)的垂直电位分布表明，当施加负电压时，沿半导体/绝缘体界面出现一个电位峰。基于界面处的可视化电位峰，讨论了电荷注入过程。
Kelvin probe force microscopy was applied to the cross-sectional potential imaging of a working organic thin-film transistor (OTFT). The bottom-contact-type OTFT with an active layer of copper-phthalocyanine (CuPc) was cleaved and internal potential distribution of its channel region was visualized. The potential distribution on the cross section changed depending on the applied drain and gate voltage. Horizontal potential distribution in the semiconductor film from source to drain direction was roughly consistent with the results of surface potential imaging previously reported. Vertical potential distribution from bottom (gate) to top (CuPc film) showed that a potential peak appeared along the semiconductor/insulator interface when a negative voltage was applied to the gate. The charge injection process is discussed based on the visualized potential peak at the interface.