In situ AFM Investigation of Interfacial Morphology of Single Crystal Silicon Wafer Anode
In situ AFM Investigation of Interfacial Morphology of Single Crystal Silicon Wafer Anode
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单晶硅片阳极界面形貌的原位 AFM 研究
DOI：
10.3866/pku.whxb201511132
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
Wan Li-Jun
中科院分区：
文献类型：
--
作者：
Liu Xing-Rui;Yan Hui-Juan;Wang Dong;Wan Li-Jun
用原位原子力显微镜(AFM)研究了单晶硅片阳极在第一次放电-充电循环过程中的界面形态。固体-电解质界面相(SEI)从1.5V开始生长，在1.25~1.0V之间快速发展，0.6V后发展缓慢。在AFM针尖扫描过程中，SEI的外层柔软，容易被刮掉。SEI下层呈颗粒状。在锂化过程中，由于锂离子的插入，硅表面变得颗粒化。在第一次循环后，硅表面完全被不均匀的SEI覆盖。SEI的厚度约为10-40 nm。
The interfacial morphology of a single crystal Si wafer anode during the first discharging-charging cycle was investigated using in situ atomic force microscopy (AFM). The solid-electrolyte interphase (SEI) began to grow from 1.5 V, developing rapidly between 1.25 and 1.0 V, and slowed down after 0.6 V. The morphology suggested that the SEI had a layered structure. The outer layer of SEI was soft and easy to be scraped off during the AFM tip scanning. The underlayer of SEI had granular features. During the lithiation process, the Si surface became grainy because of the insertion of Li ions. After the first cycle, the Si surface was completely covered by inhomogeneous SEI. The thickness of the SEI was approximately 10–40 nm.