Dielectric properties of BaTi2O5 thick films prepared on Pt-coated MgO (110) single-crystal substrate by laser chemical vapor deposition
Dielectric properties of BaTi2O5 thick films prepared on Pt-coated MgO (110) single-crystal substrate by laser chemical vapor deposition
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DOI：
10.1016/j.ceramint.2016.03.221
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发表时间：
2016-07-01
影响因子：
5.2
通讯作者：
Zhang, Lianmeng
中科院分区：
文献类型：
--
作者：
Guo, Dongyun;Ju, Yang;Zhang, Lianmeng
采用激光化学气相沉积法在镀Pt的MgO（110）单晶衬底上制备了BaTi 2 O 5（BT 2）薄膜。在高沉积速率下沉积单相BT 2厚膜。BT 2厚膜由具有柱状横截面的细长晶粒组成。随着沉积温度（T-dep）的升高，BT 2厚膜的取向由（112）向（511）转变，晶粒尺寸增大。在T-dep=956 K下沉积的（112）取向的BT 2厚膜具有67的介电常数（ε ′）和0.015的介电损耗（tan δ），而在T-dep=964 K下沉积的（511）取向的BT 2厚膜在300 K和1 MHz下具有74的ε ′和0.019的tan δ。(C)2016 Elsevier Ltd和Techna Group S.r.l. All rights reserved.
BaTi2O5 (BT2) films were deposited on Pt-coated MgO(110) single-crystal substrates by laser chemical vapor deposition. The single-phase BT2 thick films were deposited at high deposition rates. The BT2 thick films consisted of elongated grains with columnar cross-section. With increasing the deposition temperature (T-dep), the orientation of BT2 thick films changed from (112) to (511), and the grain size increased. The (112)-oriented BT2 thick film deposited at T-dep=956 K had dielectric constant (epsilon') of 67 and dielectric loss (tan delta) of 0.015, while the (511)-oriented BT2 thick film deposited at T-dep=964 K had epsilon' of 74 and tan delta of 0.019 at 300 K and 1 MHz. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.