Evaluation and prediction of the degradation of a COTS CCD induced by displacement damage
Evaluation and prediction of the degradation of a COTS CCD induced by displacement damage
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DOI：
10.1109/tns.2002.805554
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发表时间：
2002-12
影响因子：
1.8
通讯作者：
R. Germanicus;S. Barde;L. Dusseau;G. Rolland;C. Barillot;F. Saigné;R. Ecoffet;P. Calvel;J. Fesquet;J. Gasiot
中科院分区：
文献类型：
--
作者：
R. Germanicus;S. Barde;L. Dusseau;G. Rolland;C. Barillot;F. Saigné;R. Ecoffet;P. Calvel;J. Fesquet;J. Gasiot
Proton-irradiation results ranging from 17 MeV to 100 MeV are presented for silicon commercial off-the-shelf charge-coupled devices. Mean degradation of the dark current and the dark-signal nonuniformity are analyzed. A good linearity between proton-nonionizing energy loss and the mean dark-signal degradation is obtained. A method to determine parameters required by the Marshall method prediction is proposed. This method is based on the three experimental and theoretical moments. An excellent agreement is obtained with the experimental degradation. The last step is to perform the method on a continuous proton spectrum. Prediction of dark-signal behavior is in a good agreement with experimental data.
