Photoconductivity of iron doped amorphous carbon films on n-type silicon substrates
Photoconductivity of iron doped amorphous carbon films on n-type silicon substrates
复制标题
n型硅衬底上铁掺杂非晶碳薄膜的光电导性
DOI：
10.1063/1.3177190
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发表时间：
2009-07-13
影响因子：
4
通讯作者：
Tan, Xinyu
中科院分区：
文献类型：
--
作者：
Wan, Caihua;Zhang, Xiaozhong;Tan, Xinyu
采用脉冲激光沉积的方法在n型硅衬底上沉积了掺Fe的a-C薄膜。Fe掺杂的a-C薄膜为p型半导体，富含sp(2)(接近75%)。在电流面内几何结构下测量了结构的I-V特性和光电导。室温下，在功率为20 mW/cm(2)的白光照射下，观察到了与220量级相当的170的光电导。这种光电导归因于p型a-C：Fe薄膜和n型硅衬底之间形成的p-n结，其反向偏置饱和电流在光照下强烈增加。
The Fe doped a-C films on n-type silicon substrates were deposited by pulse laser deposition. The Fe doped a-C films are p-type semiconductor and they are rich in sp(2) (similar to 75%). I-V characteristics and photoconductivity of the structures were measured in the current in-plane geometry. The photoconductivity with magnitude of 170 similar to 220 was observed under white light illumination with power of 20 mW/cm(2) at room temperature. The photoconductivity is ascribed to the p-n junction formed between the p-type a-C: Fe film and the n-type Si substrate whose reverse-biased saturation current increases intensively under illumination.