Focused electron beam deposited silicon dioxide derivatives for nano-electronic applications
Focused electron beam deposited silicon dioxide derivatives for nano-electronic applications
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DOI：
10.1016/j.mssp.2022.106736
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发表时间：
2022-05-06
影响因子：
4.1
通讯作者：
Clowes，Steven K.
中科院分区：
文献类型：
--
作者：
Chapman，Gemma;Masteghin，Mateus G.;Clowes，Steven K.
介绍了在TEOS或TMCTS前驱体存在下，用聚焦电子束形成的二氧化硅衍生绝缘体的材料和电性能。用拉曼光谱和能谱分析了沉积介质的化学结构和组成。结果表明，正硅酸乙酯前驱体制备的介电材料中碳含量降低(∼为3%)，且与电子束能量无关。与TMCTS的一项调查表明，使用额外的水蒸气供应作为原位氧化共反应物的重要性，将沉积的碳含量降低高达六倍。用泄漏电流和电压击穿测量来计算绝缘子的有效电阻和介电强度。这两种前驱体形成的绝缘体具有相似的电学性能，对于100 nm厚的沉积，有效电阻约为GΩ数量级，介电强度为7 mV cm−1，与溅射的二氧化硅中的绝缘体相当，但可以进行高分辨率的无掩模光刻。
The material and electrical properties of silicon dioxide derived insulators formed with a focused electron beam in the presence of a TEOS or TMCTS precursor are presented. Raman and energy dispersive X-ray spectroscopy were used to analyse the chemical structure and composition of the deposited dielectric. It was found that the TEOS precursor induced a purer dielectric with a reduced carbon percentage (∼ 3%) which was independent of the electron beam energy. An investigation with TMCTS showed the importance of using an additional water vapour supply as an in-situ oxidising co-reactant, suppressing the deposited carbon content by up to a factor of six. Leakage current and voltage breakdown measurements were used to calculate the effective resistance and the dielectric strength of the insulator. The two precursors formed insulators with similar electrical properties with effective resistances on the order of G Ω for< 100 nm thick depositions and dielectric strengths of 7 MV cm− 1, equivalent to those found in sputtered silicon dioxides, but allowing high-resolution maskless lithography.