Growth of single crystal silver thin film induced by incident ion beam bombardment
Growth of single crystal silver thin film induced by incident ion beam bombardment
复制标题
DOI：
10.1179/174328407x154356
复制
发表时间：
2007-02
影响因子：
1.8
通讯作者：
Y. Gu;F. Zeng;F. Pan
中科院分区：
文献类型：
--
作者：
Y. Gu;F. Zeng;F. Pan
采用低能离子束辅助沉积技术在NaCl单晶衬底上制备了单晶银薄膜。结果表明，银薄膜的微观结构对入射离子束轰击参数敏感。在所研究的各种实验条件中，只有在入射角为45°，离子束能量为500 eV，电流密度为6 μA cm−2时才能获得单晶银薄膜。从沟道效应和银膜与衬底的晶格匹配两个方面讨论了单晶薄膜的生长机理。
The single crystal silver thin film was fabricated on NaCl single crystal substrate by low energy ion beam assisted deposition technology. It was found that the microstructure of the silver thin film was sensitive to the incident ion beam bombardment parameters. Among the various experimental conditions studied, the single crystal silver thin film was only obtained at impinging angle of 45°, ion beam energy of 500 eV and current density of 6 μA cm−2. The growth mechanism of the single crystal thin film was discussed based on channeling effects and lattice matching between silver films and the substrates.