Formation of p-Type Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films by Boron Doping
Formation of p-Type Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films by Boron Doping
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DOI：
10.1143/jjap.49.031302
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发表时间：
2010-03
影响因子：
1.5
通讯作者：
S. Ohmagari;T. Yoshitake;Akira Nagano;R. Ohtani;H. Setoyama;E. Kobayashi;Takeshi Hara;K. Nagayama
中科院分区：
文献类型：
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作者：
S. Ohmagari;T. Yoshitake;Akira Nagano;R. Ohtani;H. Setoyama;E. Kobayashi;Takeshi Hara;K. Nagayama
以掺硼石墨为靶材，采用脉冲激光沉积法制备了p型超晶金刚石(UNCD)/氢化非晶碳（a-C:H）复合薄膜。热分析证实了p型传导的存在。电导率随硼掺杂量的增加而增加。Arrhenius图估计的活化能约为0.1 eV。近边x射线吸收精细结构谱显示，随着硼掺杂量的增加，σ* C-H峰减弱，σ* C-B峰增强。傅里叶红外光谱分析表明，随着硼的掺入量的增加，sp3 C-H峰减弱。这可能表明终止UNCD晶体悬垂键的氢原子部分被硼原子取代。
p-Type ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite films were fabricated by pulsed laser deposition using boron-doped graphite targets. Thermal analysis confirmed the occurrence of p-type conduction. The electrical conductivity increased with the doped amount of boron. An activation energy estimated from the Arrhenius plot was approximately 0.1 eV. Near-edge X-ray absorption fine structure spectra revealed that the σ*C–H peak weakened and the σ*C–B peak strengthened with an increase in the doped amount of boron. Fourier transform infrared spectroscopy showed that the sp3 C–H peak weakened with the doped amount of boron. These probably indicate that the hydrogen atoms that terminate the dangling bonds of UNCD crystallites are partially replaced with boron atoms.