Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell
Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell
复制标题
CMOS 单电子存储单元的条件色散读出
DOI：
10.1103/physrevapplied.9.054016
复制
发表时间：
2017
影响因子：
4.6
通讯作者：
M. Gonzalez
中科院分区：
文献类型：
--
作者：
S. Schaal;Sylvain Barraud;J. Morton;M. Gonzalez
量子计算机需要与经典电子器件的接口，以实现有效的量子位控制、测量和快速数据处理。使用相同的技术制造量子位和经典控制层是有吸引力的，因为它将促进集成过程，提高反馈速度，并为布线和布局挑战提供潜在的解决方案。使用互补金属氧化物半导体（CMOS）工艺将经典和量子器件单片集成，使处理器能够从最成熟的工业技术中获益，用于制造大规模电路。我们展示了一个CMOS单电子存储单元由一个单一的量子点和一个晶体管，锁定量子点栅极上的电荷。通过使用集总元件的基于栅极的色散感测有条件地读出单电子存储器单元
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谐振器控制场效应晶体管（FET）和量子点采用全耗尽绝缘体上硅技术制作在同一芯片上。我们得到的电荷灵敏度为
δ
Q
=
95
×
10
−
6
e
Hz
−
1
/
2
当通过控制FET使能量子点读出时，与没有控制FET的结果相当。此外，当在毫开尔文温度下将单电子电荷存储在量子点上时，我们观察到一秒量级的单电子保留时间。这些结果表明，在CMOS量子器件中实现基于门的色散读出的基于时间的多路复用迈出了第一步，为全硅量子经典处理器的开发开辟了道路。
Quantum computers require interfaces with classical electronics for efficient qubit control, measurement, and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offering potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-semiconductor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large-scale circuits. We demonstrate a CMOS single-electron memory cell composed of a single quantum dot and a transistor that locks charge on the quantum-dot gate. The single-electron memory cell is conditionally read out by gate-based dispersive sensing using a lumped-element
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resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully depleted silicon-on-insulator technology. We obtain a charge sensitivity of
δ
q
=
95
×
10
−
6
e
Hz
−
1
/
2
when the quantum-dot readout is enabled by the control FET, comparable to results without the control FET. Additionally, we observe a single-electron retention time on the order of a second when storing a single-electron charge on the quantum dot at millikelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive readout in CMOS quantum devices opening the path for the development of an all-silicon quantum-classical processor.
影响因子：
10.8
作者：
Betz, A. C.;Wacquez, R.;Gonzalez-Zalba, M. F.
通讯作者：
Gonzalez-Zalba, M. F.
影响因子：
3.7
作者：
Pica, G.;Lovett, B. W.;Lyon, S. A.
通讯作者：
Lyon, S. A.