Graphene masks as passivation layers in the electrochemical etching of silicon
Graphene masks as passivation layers in the electrochemical etching of silicon
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DOI：
10.1007/s10853-014-8492-9
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发表时间：
2014-11-01
影响因子：
4.5
通讯作者：
Ellis, Amanda Vera
中科院分区：
文献类型：
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作者：
Fang, Cheng;Shapter, Joseph George;Ellis, Amanda Vera
使用石墨烯薄膜进行位点特定掩模有可能促进大面积硅基板上低成本、高产量的微图案。在这里，展示了一种使用石墨烯作为硅晶圆上的掩蔽剂进行特定位点图案化的简便方法。通过密封带剥离方法将石墨烯片沉积到氢化物封端（Si-H）硅基板上。拉曼共焦图显示石墨烯下方的硅晶片的氧化受到抑制，表明石墨烯限制了氧扩散到硅表面上。然后，在 HF/乙醇 (3:1 (v/v)) 阳极氧化溶液中对石墨烯涂覆的 Si 基底进行电化学蚀刻。扫描电子显微镜显示石墨烯层成功限制了Si表面的蚀刻，然而，在石墨烯的边缘位置附近发生了深蚀刻。
Site-specific masking with graphene films has the potential to facilitate low-cost, high-throughput micro-patterns on silicon substrates over large areas. Here, a facile approach to using graphene as a masking agent on silicon wafers for site-specific patterning is demonstrated. Graphene sheets were deposited via a sealing-tape-exfoliation method onto hydride-terminated (Si-H) silicon substrates. Raman confocal mapping showed inhibition of oxidation of the Si wafer underlying the graphene, indicating that the graphene restricts the diffusion of oxygen onto the Si surface. The graphene coated Si substrates were then electrochemically etched in an aqueous HF/ethanol (3:1 (v/v)) anodization solution. Scanning electron microscopy showed that the graphene layer successfully restricted the etching of the Si surface, however, near the edge sites of the graphene deep etching occurred.