Pulsed-Laser-Induced Microcrystallization and Amorphization of Silicon Thin Films
Pulsed-Laser-Induced Microcrystallization and Amorphization of Silicon Thin Films
复制标题
脉冲激光诱导硅薄膜的微晶化和非晶化
DOI：
10.1143/jjap.40.480
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发表时间：
2001
影响因子：
1.5
通讯作者：
T. Sameshima
中科院分区：
文献类型：
--
作者：
S. Higashi;T. Sameshima
通过瞬态反射率和电导测量研究了脉冲激光诱导的硅薄膜微晶化和非晶化。实验表明，硅薄膜的完全熔化和随后的过冷会引起微晶化和非晶化。在49.1nm厚的Si膜的微晶化的情况下，观察到过冷液体Si之间的成核。微晶化条件下的成核温度和成核速率估计分别为1047 K和1.67×1025事件/(cm3·s)。另一方面，在对20.7nm厚的Si膜进行激光非晶化的情况下，尽管该膜在约80ns的相对较长的时间内熔化，但没有观察到明显的成核。液态硅薄膜的极快淬火似乎抑制了成核并导致非晶相凝固。
Pulsed-laser-induced microcrystallization and amorphization of Si thin films were investigated by transient reflectance and conductance measurements. It was clarified experimentally that the complete melting of a Si film and subsequent supercooling induces both microcrystallization and amorphization. In the case of the microcrystallization of a 49.1-nm-thick Si film, nucleation among supercooled liquid Si was observed. The nucleation temperature and resulting nucleation rate under the microcrystallization condition were estimated to be 1047 K and 1.67×1025 events/(cm3·s), respectively. On the other hand, no significant nucleation was observed in the case of a laser amorphization of 20.7-nm-thick Si film although the film was melted for the relatively long duration of about 80 ns. Extremely fast quench of liquid Si films seems to suppress nucleation and results in solidification in amorphous phase.